This enabled circuit operation below 3 V with an operating frequency of up to 25 kHz, which was constrained by parasitic capacitances
I would guess process improvements would help a lot towards lowering those parasitics. So I wouldn't take this initial attempt as a guide for ultimate speed.
Since this is 2D materials, a capacitor is a dielectric sandwiched by two conductors and capacitance scales linearly with area, I would assume just scaling things down would help immensely with parasitic capacitance. Changing materials or process could also change the dielectric constant which also affects the capacitance linearly.
Paper is sadly not open access, so I can't check if they mention this or have done some theoretical peak calculations or something. Would indeed be interesting to know.
Something that is nice with MoS2 and the others are transition metal dichalcogenides and have some beneficial physical properties like a natural electronic bandgap, unlike silicon.
I don't see how that would be relevant since the melting temperature of Silicon is already _significantly_ higher than temperatures on Venus can reach outside of reentry
And the part that is substrate, not the packaging is tiny and thin. It's much less than a gram of material in CPUs and even less in smaller chips. That's not going to be a significant part of final price. Also remember that silicon currently used is not some regular sand, but grown monocrystals that are a bit pricier.
It shows just the symbols of the elements (W, Se, Mo) and the number 2, not the compounds. The "W", "S", "M", and "2" characters are in the correct place on a QWERTY keyboard, and they appended the necessary additional characters to complete the symbols as needed, even if the "e" in Se and "o" in Mo aren't in the correct spot on the layout.
https://en.wikipedia.org/wiki/One-instruction_set_computer